Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
In the past few years, many groups have focused on the research and development of GaN-based ultraviolet laser diodes (UV LDs). Great progresses have been achieved even though many challenges exist. In this article, we analyze the challenges of developing GaN-based ultraviolet laser diodes, and the approaches to improve the performance of ultraviolet laser diode are reviewed. With these techniques, room temperature (RT) pulsed oscillation of AlGaN UVA (ultraviolet A) LD has been realized, with a lasing wavelength of 357.9 nm. Combining with the suppression of thermal effect, the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.
Journal of Semiconductors
2024, 45(1): 011501
Author Affiliations
Abstract
1 School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
2 School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Electromagnetic topological chiral edge states mimicking the quantum Hall effect have attracted a great deal of attention due to their unique features of free backscattering and immunity against sharp bends and defects. However, the matching techniques between classical waveguides and the topological one-way waveguide deserve more attention for real-world applications. In this paper, a highly efficient conversion structure between a classical rectangular waveguide and a topological one-way waveguide is proposed and demonstrated at the microwave frequency, which efficiently converts classical guided waves to topological one-way edge states. A tapered transition is designed to match both the momentum and impedance of the classical guided waves and the topological one-way edge states. With the conversion structure, the waves generated by a point excitation source can be coupled to the topological one-way waveguide with very high coupling efficiency, which can ensure high transmission of the whole system (i.e., from the source and the receiver). Simulation and measurement results demonstrate the proposed method. This investigation is beneficial to the applications of topological one-way waveguides and opens up a new avenue for advanced topological and classical integrated functional devices and systems.
guided waves highly efficient conversion photonic crystals topological chiral edge states 
Chinese Optics Letters
2024, 22(2): 023902
作者单位
摘要
1 民航宁夏空管分局, 银川 750009
2 国家气象中心, 北京 100081
3 民航新疆空中交通管理局, 乌鲁木齐 830016
为了研究动量下传大风的特征、探讨动量下传大风的预报方法, 利用美国国家环境预报中心(NCEP)再分析资料、常规气象观测资料和测风激光雷达(LiDAR)资料, 对银川机场2022-03-06动量下传大风过程进行了分析。结果表明, 银川机场位于西风急流入口左侧的辐合区, 为动量下传大风的发生提供了有利的环流背景,在晴空条件下, 测风激光雷达产品可以精准探测动量下传大风的时空演变特征; 多普勒光束摆动(DBS)模式产品中强下沉气流标志动量下传开始, 平面位置显示(PPI)模式探测范围的衰减程度和变化方位反映了沙尘天气强度和影响路径, 距离高度显示(RHI)模式500 m高度径向风分层现象的出现及被破坏是动量下传变化的预报指标; 利用测风激光雷达可提前30 min计算和预报出动量下传大风的出现时间。该研究对提高气象服务保障能力具有重要意义。
激光技术 大风预报 测风激光雷达 动量下传 温度对数压力图 laser technique gale forecast wind light detection and ranging momentum downward temperature logarithmic pressure diagram 
激光技术
2023, 47(3): 432
Author Affiliations
Abstract
1 School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
2 School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
Valley Hall topological photonic crystals, inspired by topological insulators in condensed matter physics, have provided a promising solution to control the flow of light. Recently, the dynamic manipulation property of topological photonic crystals has been widely studied. Here, we propose a novel solution for programmable valley photonic crystals, called field programmable topological edge array (FPTEA), based on the field reorientation property of nematic liquid crystals and robust valley-protected edge modes. FPTEA is composed of an array of graphene-like lattices with C3 symmetry, in which the birefringence of liquid crystal is larger than 0.5105. Due to the dielectric anisotropy of liquid crystals being sensitive to external fields such as light, heat, electric, and magnetic fields, each lattice is tunable, and the topological propagation routes and even the lattice parameters can be dynamically changed while changing the distribution of external fields. We numerically demonstrate three methods of composing an FPTEA device to design arbitrary passive optical devices by electric driving, thermal inducing, or UV writing. These results show the great application potential of liquid crystals in topological photonic crystals, and enrich the design of programmable integrated topological devices with broad working bandwidth ranging from microwave to visible light.
Photonics Research
2023, 11(3): 476
作者单位
摘要
1 武汉海尔热水器有限公司, 武汉 430000
2 深圳市天美新科技有限公司, 深圳 518000
3 东莞市天美新自动化设备有限公司, 东莞 523000
4 东华大学材料科学与工程学院, 上海 201620
简述了热水器内胆搪瓷智能制造工厂的顶层设计方向, 通过分析智能制造设备顶层设计案例, 展望了智能制造工厂顶层设计的发展趋势。
热水器内胆 搪瓷工厂 智能化设备 顶层设计 发展趋势 water heater tank enamel factory intelligent equipment top-level design development trend 
玻璃搪瓷与眼镜
2022, 50(10): 44
作者单位
摘要
1 华东交通大学信息工程学院,江西 南昌 330013
2 南昌市第三医院乳腺肿瘤科,江西 南昌 330009
针对基于深度学习的乳腺癌诊断中小肿块和互相遮挡肿块易被漏诊的问题,提出了一种用于乳腺肿块检测的改进型YOLOv3算法。首先,在特征融合模块中添加了自底向上的路径,并采用级联和跨层连接的方式充分利用底层特征信息,提高了小肿块的识别精度;其次,为了筛选出更精确的预测框,避免互相遮挡的肿块出现漏检的情况,在软非极大值抑制(Soft-NMS)算法中引入了距离交并比(DIoU)来抑制冗余的预测框。实验结果表明,所提乳腺肿块检测算法在检测小肿块和互相遮挡的肿块方面有较高的准确率和速度,平均均值精度(mAP@0.5)达到了96.1%,相比于YOLOv3提高了1.8个百分点,且每张钼靶图像的检测时间仅为28 ms。
图像处理 乳腺钼靶图像 YOLOv3 特征融合 距离交并比 软非极大值抑制 目标检测 
激光与光电子学进展
2022, 59(4): 0410003
Author Affiliations
Abstract
1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Abstract
Journal of Semiconductors
2022, 43(1): 010501
Author Affiliations
Abstract
1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.
Journal of Semiconductors
2021, 42(11): 112801
Author Affiliations
Abstract
1 Department of Electronics and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
2 Department of Computer Science Engineering, Hong Kong University of Science and Technology, Hong Kong, China
The high performance of the state-of-the-art deep neural networks (DNNs) is acquired at the cost of huge consumption of computing resources. Quantization of networks is recently recognized as a promising solution to solve the problem and significantly reduce the resource usage. However, the previous quantization works have mostly focused on the DNN inference, and there were very few works to address on the challenges of DNN training. In this paper, we leverage dynamic fixed-point (DFP) quantization algorithm and stochastic rounding (SR) strategy to develop a fully quantized 8-bit neural networks targeting low bitwidth training. The experiments show that, in comparison to the full-precision networks, the accuracy drop of our quantized convolutional neural networks (CNNs) can be less than 2%, even when applied to deep models evaluated on ImageNet dataset. Additionally, our 8-bit GNMT translation network can achieve almost identical BLEU to full-precision network. We further implement a prototype on FPGA and the synthesis shows that the low bitwidth training scheme can reduce the resource usage significantly.
Journal of Semiconductors
2020, 41(2): 022404
梁锋 1赵德刚 1,2,*江德生 1刘宗顺 1[ ... ]杨静 1
作者单位
摘要
1 中国科学院半导体研究所集成光电子学国家重点实验室, 北京 100083
2 中国科学院大学材料科学与光电技术学院, 北京 100049
详细研究了n型AlGaN限制层与InGaN上波导对GaN基绿光激光器光场分布与电学特性的影响,结果表明:增加n型AlGaN限制层厚度或提高InGaN上波导中的铟组分可以明显抑制GaN基绿光激光器的光场泄漏,改善光场分布;相比In0.02Ga0.98N上波导,采用更高铟组分的In0.05Ga0.95N上波导可增加光场限制因子,改善绿光激光器的性能。综合调控n型限制层和上波导才能有效改善GaN基绿光激光器的光场分布,提高激光器的性能。
激光光学 氮化镓 绿光激光器 光场分布 
中国激光
2020, 47(7): 0701018

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